? 2015 ixys corporation, all rights reserved xpt tm 650v igbt genx3 tm w/ diode v ces = 650v i c110 = 75a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.3v t fi(typ) = 60ns symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 175 a i lrms terminal current limit 160 a i c110 t c = 110c 75 a i f110 t c = 110c 66 a i cm t c = 25c, 1ms 360 a i a t c = 25c 30 a e as t c = 25c 300 mj ssoa v ge = 15v, t vj = 150c, r g = 3 ? i cm = 150 a (rbsoa) clamped inductive load v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 8 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 750 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight 6g ds100626a(4/15) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 25 ? a t j = 150 ? c 3 ma i ges v ce = 0v, v ge = ? 20v ???????????????? 100 na v ce(sat) i c = 60a, v ge = 15v, note 1 1.8 2.3 v t j = 150 ? c 2.2 v features ? international standard package ? optimized for 20-60khz switching ? square rbsoa ? avalanche rated ? short circuit capability ? high current handling capability ? anti-parallel fast diode advantages ? high power density ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts extreme light punch through igbt for 20-60khz switching IXYH75N65C3D1 g = gate c = collector e = emitter tab = collector to-247 ad g c e tab preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXYH75N65C3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 25 44 s c ie s 3410 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 330 pf c res 73 pf q g(on) 122 nc q ge i c = 60a, v ge = 15v, v ce = 0.5 ? v ces 22 nc q gc 60 nc t d(on) 26 ns t ri 65 ns e on 2.00 mj t d(off) 93 ns t fi 60 ns e of f 0.95 mj t d(on) 26 ns t ri 64 ns e on 3.40 mj t d(off) 115 ns t fi 64 ns e off 1.30 mj r thjc 0.20 c/w r thcs 0.21 c/w notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . inductive load, t j = 150c i c = 60a, v ge = 15v v ce = 400v, r g = 3 ? note 2 inductive load, t j = 25c i c = 60a, v ge = 15v v ce = 400v, r g = 3 ? note 2 reverse diode (fred) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 50a, v ge = 0v, note 1 2.50 v t j = 150c 1.45 v i rr t j = 150c 30 a t rr t j = 150c 135 ns r thjc 0.45 c/w i f = 50a, v ge = 0v, -di f /dt = 700a/ s, v r = 400v preliminary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. 1 - gate 2,4 - collector 3 - emitter to-247 (ixyh) outline 3 d s a l d r e e1 l1 d1 d2 a2 q c b a 0p 0k m d b m b4 0p1 1 2 4 b c e ixys option r1 r1 r1 r1 j m c a m b2 a1
? 2015 ixys corporation, all rights reserved IXYH75N65C3D1 fig. 1. output characteristics @ t j = 25oc 0 30 60 90 120 150 01234 v ce (v) i c (a) v ge = 15v 14v 13v 12v 7v 8v 9v 11v 10v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 5 10 15 20 v ce (v) i c ( a) v ge = 15v 14v 12v 9v 8v 7v 10v 13v 11v fig. 3. output characteristics @ t j = 150oc 0 30 60 90 120 150 00.5 11.5 22.533.544.55 v ce (v) i c (a) 8v 7v 6v 9v v ge = 15v 14v 13v 12v 10v 11v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j (oc) v ce(sat) - normalized v ge = 15v i c = 60a i c = 30a i c = 120a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 0 1 2 3 4 5 6 8 9 10 11 12 13 14 15 v ge - (v) v ce (v) i c = 120a t j = 25oc 60a 30a fig. 6. input admittance 0 20 40 60 80 100 120 140 4567891011 v ge (v) i c ( a) t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYH75N65C3D1 fig. 7. transconductance 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 180 i c (a) g f s ( s) t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 100 200 300 400 500 600 700 v ce (v) i c (a) t j = 150oc r g = 3 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20406080100120 q g (nc) v ge (v) v ce = 325v i c = 60a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce (v) capacitance (pf ) f = 1 mh z c ies c oes c res fig. 12. maximum transient thermal impedance (igbt) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) z (th)jc (oc / w) fig. 11. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds (v) i d (a) t j = 175oc t c = 25oc single pulse 25s 1ms 10ms v ce(sat) limit 100s dc
? 2015 ixys corporation, all rights reserved IXYH75N65C3D1 fig. 13. inductive switching energy loss vs. gate resistance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 25 30 35 r g ( ? ) e off (mj) 1 2 3 4 5 6 7 8 9 e on (mj) e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 40a i c = 80a fig. 16. inductive turn-off switching times v s. gate resistance 0 20 40 60 80 100 120 0 5 10 15 20 25 30 35 r g ( ? ) t f i (ns) 0 100 200 300 400 500 600 t d(off) (ns) t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 40a, 80a fig. 14. inductive switching energy loss vs. collector current 0.0 0.4 0.8 1.2 1.6 2.0 2.4 40 45 50 55 60 65 70 75 80 i c (a) e off (mj) 0 1 2 3 4 5 6 e on (mj) e off e on - - - - r g = 3 ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 15. inductive switching energy loss vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j (oc) e off (mj) 0 1 2 3 4 5 6 e on (mj) e off e on - - - - r g = 3 ? , v ge = 15v v ce = 400v i c = 40a i c = 80a fig. 17. inductive turn-off switching times vs. collector current 0 20 40 60 80 100 40 45 50 55 60 65 70 75 80 i c (a) t f i (ns) 60 80 100 120 140 160 t d(off) (ns) t f i t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 0 20 40 60 80 100 120 25 50 75 100 125 150 t j (oc) t f i (ns) 60 80 100 120 140 160 180 t d(off) (ns) t f i t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 400v i c = 80a i c = 40a
ixys reserves the right to change limits, test conditions, and dimensions. IXYH75N65C3D1 fig. 20. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 40 45 50 55 60 65 70 75 80 i c (a) t r i (ns) 0 10 20 30 40 50 60 t d(on) (ns) t r i t d(on) - - - - r g = 3 ? , v ge = 15v v ce = 400v t j = 25oc, 150oc fig. 21. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 25 50 75 100 125 150 t j (oc) t r i (ns) 20 22 24 26 28 30 32 34 t d(on) (ns) t r i t d(on) - - - - r g = 3 ? , v ge = 15v v ce = 400v i c = 40a i c = 80a fig. 19. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 35 r g ( ? ) t r i (ns) 10 20 30 40 50 60 70 80 90 100 110 t d(on) (ns) t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 40a i c = 80a fig. 22. maximum peak load current vs. frequency 0 10 20 30 40 50 60 70 80 90 100 10 100 1,000 f max (khz) i c (a) t j = 150oc t c = 75oc v ce = 400v v ge = 15v r g = 3 ? d = 0.5 square wave triangular wave
? 2015 ixys corporation, all rights reserved IXYH75N65C3D1 ixys ref: ixy_75n65c3d1(71-r47) 8-21-14 fig. 28. maximum transient thermal impedance (diode) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) z (th)jc (oc / w) fig. 27. dynamic parameters q rr, i rr vs. junction temperature 0 0.2 0.4 0.6 0.8 1 1.2 0 20 40 60 80 100 120 140 160 t j (oc) k f k f i rr k f q rr v r = 400v i f = 50a -di f /dt = 700 a/s fig. 23. diode forward characteristics 0 10 20 30 40 50 60 70 80 90 100 00.5 11.5 22.5 v f (v) i f (a) t j = 150oc t j = 25oc fig. 24. reverse recovery charge vs. -di f /dt 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 400 500 600 700 800 900 1000 1100 -di f / dt (a/s) q rr (c) t j = 150oc v r = 400v i f = 100a 25a 50a fig. 25. reverse recovery current vs. -di f /dt 18 20 22 24 26 28 30 32 34 400 500 600 700 800 900 1000 1100 -di f /dt (a/s) i rr (a) t j = 150oc v r = 400v 25a 50a i f = 100a fig. 26. reverse recovery time vs. -di f /dt 80 100 120 140 160 180 200 220 240 400 500 600 700 800 900 1000 1100 -di f /dt (a/s) t rr (ns) t j = 150oc v r = 400v 50a 25a i f = 100a
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